Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch

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Fältnamn	Indikatorer	Metadata
000		03955naa a2200541 4500
001		oai:research.chalmers.se:66b82ff9-08d0-4884-b4ae-ad8ce836adfc
003		SwePub
008		230316s2023 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://research.chalmers.se/publication/5349552 URI
024	7	a https://doi.org/10.1109/ACCESS.2023.32513972 DOI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a art2 swepub-publicationtype
072	7	a ref2 swepub-contenttype
100	1	a Qin, Haihongu Nanjing University of Aeronautics and Astronautics4 aut
245	1 0	a Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch
264	1	c 2023
338		a electronic2 rdacarrier
520		a SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.
650	7	a TEKNIK OCH TEKNOLOGIERx Maskinteknikx Energiteknik0 (SwePub)203042 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Mechanical Engineeringx Energy Engineering0 (SwePub)203042 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Maskinteknikx Farkostteknik0 (SwePub)203032 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Mechanical Engineeringx Vehicle Engineering0 (SwePub)203032 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653		a MOSFET
653		a current spike
653		a Switches
653		a suppression method
653		a Delays
653		a hybrid switch
653		a SiC MOSFET/Si IGBT
653		a Insulated gate bipolar transistors
653		a Logic gates
653		a Silicon carbide
653		a Silicon
700	1	a Xie, Sixuanu Nanjing University of Aeronautics and Astronautics4 aut
700	1	a Ba, Zhenhuau Nanjing University of Aeronautics and Astronautics4 aut
700	1	a Liu, Xiangu Nanjing University of Aeronautics and Astronautics4 aut
700	1	a Chen, Wenmingu Nanjing University of Aeronautics and Astronautics4 aut
700	1	a Fu, Dafengu Nanjing University of Aeronautics and Astronautics4 aut
700	1	a Xun, Qian,d 1990u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)qianx
710	2	a Nanjing University of Aeronautics and Astronauticsb Chalmers tekniska högskola4 org
773	0	t IEEE Accessg 11, s. 26832-26842q 11<26832-26842x 2169-3536x 2169-3536
856	4	u https://research.chalmers.se/publication/534955/file/534955_Fulltext.pdfx primaryx freey FULLTEXT
856	4 8	u https://research.chalmers.se/publication/534955
856	4 8	u https://doi.org/10.1109/ACCESS.2023.3251397

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Av författaren/redakt...: Qin, Haihong; Xie, Sixuan; Ba, Zhenhua; Liu, Xiang; Chen, Wenming; Fu, Dafeng; visa fler...; Xun, Qian, 1990; visa färre...

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