C60 Field-Effect Transistors: Effects of Polymerization on electronic Properties and Device Performance.

• We have investigated thin-film field-effect transistors (TFTs) with C60 as the active material, and we report the effects of photo-induced polymerization of the C60 film. We find that the effects of a complete polymerization for a typical top-contact C60 TFT is as follows: the electron mobility (μn) at room temperature drops slightly from 0.074 to 0.068 cm2/Vs, the activation energy of μn decreases from 0.10 meV to 0.09 meV, and the threshold voltage for TFT operation decreases markedly by ~15 %. The latter observation suggests that the effective number of electron traps in the C60 film decreases following polymerization. Considering that the polymerization was achieved with a low-energy HeNe laser, it is conceivable that the polymerization approach could be of interest for applications, e.g., organic bulk-heterojunction solar cells, where a stabilized C60 morphology attained with benign means is desired

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