WFRF:(Jun Martin)
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InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
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- Berg, Martin (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Persson, Karl-Magnus (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Wu, Jun (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- (creator_code:org_t)
- 2014-11-10
- 2014
- English.
- In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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