WFRF:(Liu Zhenhua)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 06228naa a2200601 4500 | |
| 001 | oai:DiVA.org:miun-39876 | |
| 003 | SwePub | |
| 008 | 200917s2020 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-398762 URI |
| 024 | 7 | a https://doi.org/10.3390/nano100815552 DOI |
| 040 | a (SwePub)miun | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a for2 swepub-publicationtype |
| 100 | 1 | a Radamson, Henry H.u Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut0 (Swepub:miun)henrad |
| 245 | 1 0 | a State of the Art and Future Perspectives in Advanced CMOS Technology |
| 264 | c 2020-08-07 | |
| 264 | 1 | b MDPI AG,c 2020 |
| 338 | a electronic2 rdacarrier | |
| 520 | a The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
| 653 | a CMOS | |
| 653 | a process integration | |
| 653 | a nano-scale transistors | |
| 653 | a epitaxy | |
| 700 | 1 | a Zhu, Huilongu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Wu, Zhenhuau Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a He, Xiaobinu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Lin, Hongxiaou Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.4 aut |
| 700 | 1 | a Liu, Jinbiaou Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Xiang, Jinjuanu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Kong, Zhenzhenu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Xiong, Wenjuanu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut |
| 700 | 1 | a Li, Junjieu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut |
| 700 | 1 | a Cui, Hushanu Jiangsu Leuven Instruments, Xuzhou 221300, Jiangsu, Peoples R China.4 aut |
| 700 | 1 | a Gao, Jianfengu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Yang, Hongu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Du, Yongu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut |
| 700 | 1 | a Xu, Buqingu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut |
| 700 | 1 | a Li, Benu Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.4 aut |
| 700 | 1 | a Zhao, Xueweiu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Sci & Technol China, Sch Cybersci, Hefei 230026, Peoples R China.4 aut |
| 700 | 1 | a Yu, Jiahanu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Dong, Yanu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.4 aut |
| 700 | 1 | a Wang, Guileiu Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.4 aut |
| 710 | 2 | a Mittuniversitetetb Institutionen för elektronikkonstruktion4 org |
| 773 | 0 | t Nanomaterialsd : MDPI AGg 10:8q 10:8x 2079-4991 |
| 856 | 4 | u https://doi.org/10.3390/nano10081555y Fulltext |
| 856 | 4 | u https://miun.diva-portal.org/smash/get/diva2:1468132/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
| 856 | 4 | u https://www.mdpi.com/2079-4991/10/8/1555/pdf |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-39876 |
| 856 | 4 8 | u https://doi.org/10.3390/nano10081555 |
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