WFRF:(Amano H.)
Sökning: WFRF:(Amano H.) > (2000-2004) > InGaN/GaN multiple ...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03424naa a2200325 4500 | |
| 001 | oai:DiVA.org:liu-49606 | |
| 003 | SwePub | |
| 008 | 091011s2000 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-496062 URI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Pozina, Galiau Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)galpo50 |
| 245 | 1 0 | a InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport |
| 264 | 1 | c 2000 |
| 338 | a print2 rdacarrier | |
| 520 | a We report on studies of In0.12Ga0.88N/GaN heterostructures with three 35-Angstrom-thick quantum wells (QWs) grown on sapphire substrates by metalorganic vapor phase epitaxy with employment of mass transport. The structure is demonstrated to show good structural and optical properties. The threading dislocation density is less than 10(7) cm(-2) for the mass-transport regions. The photoluminescence (PL) spectrum is dominated by the rather narrow near-band gap emission at 2.97 eV with a linewidth of 40 meV. This emission has a typical PL decay time about 5 ns at 2 K within the PL contour. With increasing excitation intensity, an additional transition with longer decay time (about 200 ns) is enhanced at energy about 2.85 eV. The position of this line depends strongly on the excitation power. We explain the data in terms of a model, where the PL is a result of contribution from at least two nonequivalent QWs, which could be realized due to a potential gradient across the layers. (C) 2000 American Institute of Physics. [S0003- 6951(00)04337-0]. | |
| 653 | a TECHNOLOGY | |
| 653 | a TEKNIKVETENSKAP | |
| 700 | 1 | a Bergman, JPu Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan4 aut |
| 700 | 1 | a Monemar, Bou Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)bomo46 |
| 700 | 1 | a Iwaya, Mu Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan4 aut |
| 700 | 1 | a Nitta, Su Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan4 aut |
| 700 | 1 | a Amano, Hu Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan4 aut |
| 700 | 1 | a Akasaki, Iu Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan4 aut |
| 710 | 2 | a Linköpings universitetb Tekniska högskolan4 org |
| 773 | 0 | t Applied Physics Lettersg 77:11, s. 1638-1640q 77:11<1638-1640x 0003-6951x 1077-3118 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-49606 |
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