Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Westlund, Andreas,1985Chalmers tekniska högskola,Chalmers University of Technology (författare)

The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .

Nilsson, Per-Åke,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pernilss (författare)
Sangaré, P.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL) (författare)
Ducournau, G.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL) (författare)
Gaquière, C.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL) (författare)
Desplanque, L.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL) (författare)
Wallart, X.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL) (författare)
Grahn, Jan,1962Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jagr (författare)
Chalmers tekniska högskolaLille I: Universite des Sciences et Technologies de Lille (USTL) (creator_code:org_t)

Ingår i:Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics: American Vacuum Society33:2, s. 021207-2166-27462166-2754

Av författaren/redakt...: Westlund, Andrea ...; Nilsson, Per-Åke ...; Sangaré, P.; Ducournau, G.; Gaquière, C.; Desplanque, L.; visa fler...; Wallart, X.; Grahn, Jan, 1962; visa färre...

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