WFRF:(Berggren R)
Sökning: WFRF:(Berggren R) > (2010-2014) > Long-wavelength inf...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 04146naa a2200565 4500 | |
| 001 | oai:DiVA.org:kth-34662 | |
| 003 | SwePub | |
| 008 | 110613s2011 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-346622 URI |
| 024 | 7 | a https://doi.org/10.1016/j.infrared.2010.12.0312 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Gustafsson, Oscaru KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1defobl |
| 245 | 1 0 | a Long-wavelength infrared quantum-dot based interband photodetectors |
| 264 | 1 | b Elsevier BV,c 2011 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20110621 Ingår i konferens: International Conference on the Quantum Structure Infrared Photodector (QSIP), Istanbul, TURKEY, AUG 15-20, 2010 | |
| 520 | a We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWIR) regime. The detection is based on transitions between confined dot states and continuum states in a type-II band lineup, and we therefore refer to it as a dot-to-bulk (D2B) infrared photodetector with expected benefits including long carrier lifetime due to the type-II band alignment, suppressed Shockley-Read-Hall generation-recombination due to the relatively large-bandgap matrix material, inhibited Auger recombination processes due to the tensile strain and epitaxial simplicity. Metal-organic vapor-phase epitaxy was used to grow multiple (Al)GaAs(Sb) QD layers on InAs substrates at different QD nominal thicknesses, compositions, doping conditions and multilayer periods, and the material was characterized using atomic force and transmission electron microscopy, and Fourier-transform infrared absorption spectroscopy. Dot densities up to 1 x 10(11) cm(-2), 1 x 10(12) cm(-2) and 3 x 10(10) cm(-2) were measured for GaAs, AlGaAs and GaAsSb QDs, respectively. Strong absorption in GaAs, AlGaAs and GaAsSb multilayer QD samples was observed in the wavelength range 6-12 mu m. From the wavelength shift in the spectral absorption for samples with varying QD thickness and composition it is believed that the absorption is due to an intra- valance band transition. From this it is possible to estimate the type-II inter-band transition wavelength, thereby suggesting that (Al)GaAs(Sb) QD/InAs heterostructures are suitable candidates for LWIR detection and imaging. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
| 653 | a Photodetector | |
| 653 | a LWIR | |
| 653 | a QD | |
| 653 | a MOVPE | |
| 653 | a Electrical engineering, electronics and photonics | |
| 653 | a Elektroteknik, elektronik och fotonik | |
| 700 | 1 | a Berggren, Jesperu KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u13fhsee |
| 700 | 1 | a Ekenberg, Ulfu KTH,Fotonik4 aut0 (Swepub:kth)u1ajkh76 |
| 700 | 1 | a Hallén, Andersu KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u11ywmz1 |
| 700 | 1 | a Hammar, Mattiasu KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1jfzgcj |
| 700 | 1 | a Höglund, L.4 aut |
| 700 | 1 | a Karim, A.4 aut |
| 700 | 1 | a Noharet, B.4 aut |
| 700 | 1 | a Wang, Q.4 aut |
| 700 | 1 | a Gromov, A.4 aut |
| 700 | 1 | a Almqvist, S.4 aut |
| 700 | 1 | a Zhang, A.u Acreo, Sweden4 aut0 (Swepub:kth)u15dpfaf |
| 700 | 1 | a Junique, S.4 aut |
| 700 | 1 | a Andersson, J. Y.4 aut |
| 700 | 1 | a Asplund, C.4 aut |
| 700 | 1 | a von Würtemberg, R. Marcks4 aut |
| 700 | 1 | a Malm, H.4 aut |
| 700 | 1 | a Martijn, H.4 aut |
| 710 | 2 | a KTHb Integrerade komponenter och kretsar4 org |
| 773 | 0 | t Infrared physics & technologyd : Elsevier BVg 54:3, s. 287-291q 54:3<287-291x 1350-4495x 1879-0275 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-34662 |
| 856 | 4 8 | u https://doi.org/10.1016/j.infrared.2010.12.031 |
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