Area- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low ON-Resistance

• Implantation-free mesa-etched 4H-SiC bipolar junction transistors (BJTs) with a near-ideal breakdown voltage of 5.6 kV (about 92% of the theoretical value) are fabricated, measured and analyzed by device simulation. An efficient and optimized termination; area-optimized three-zone junction termination extension (O-JTE) is implemented, reducing the total area (and substrate cost) by about 30% compared to the traditional JTE designs. A maximum current gain of beta = 44 at a current density of 472 A/cm(2), and a specific on-resistance of R-ON = 18.8 m Omega.cm(2) is obtained for the device. The device shows a negative temperature coefficient of the current gain (beta = 14.5 at 200 degrees C) and a positive temperature coefficient of on-resistance (R-ON = 57.3 m Omega.cm(2) at 200 degrees C).

Ämnesord

NATURVETENSKAP  -- Data- och informationsvetenskap -- Datavetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences -- Computer Sciences (hsv//eng)

Nyckelord

4H-SiC BJT

implantation-free

area-optimized junction termination extension (O-JTE)

current gain

on-resistance

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)