WFRF:(Kuroki M)
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Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
- Kuroki, S. I. (author)
- Nagatsuma, H. (author)
- de Silva, M. (author)
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- Ishikawa, S. (author)
- Maeda, T. (author)
- Sezaki, H. (author)
- Kikkawa, T. (author)
- Makino, T. (author)
- Ohshima, T. (author)
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- (creator_code:org_t)
- Trans Tech Publications Ltd, 2016
- 2016
- English.
- In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 864-867
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- High gamma-ray radiation
- High-temperature
- SiC-nMOSFET
- Characterization
- Electric breakdown
- MOSFET devices
- Silicides
- Silicon carbide
- Threshold voltage
- Field-effect mobilities
- Gamma ray radiation
- Gamma-ray exposure
- Harsh environment
- High temperature
- NMOSFET
- Temperature coefficient
- Threshold voltage shifts
- Gamma rays
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- Kuroki, S. I.
- Nagatsuma, H.
- de Silva, M.
- Ishikawa, S.
- Maeda, T.
- Sezaki, H.
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- Kikkawa, T.
- Makino, T.
- Ohshima, T.
- Östling, Mikael
- Zetterling, Carl ...
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- By the university
- Royal Institute of Technology
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