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Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

Amin, Gul (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
Hussain, I (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
Zaman, Saima (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
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Bano, Nargis (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
Nour, Omer (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
Willander, Magnus (author)
Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
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 (creator_code:org_t)
WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY, 2010
2010
English.
In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY. - 1862-6300. ; 207:3, s. 748-752
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V-TFL) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for; the NTs were obtained as similar to 0.27 eV and 2.1 x 10(16) cm(-3), respectively. The same parameters were also extracted for the ZnO NRs The deep-level states observed crossponds to zinc interstitials (Zn-i), which are responsible for the violet emission.

Keyword

TECHNOLOGY
TEKNIKVETENSKAP

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