WFRF:(Beshkova Milena)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02205naa a2200361 4500 | |
| 001 | oai:DiVA.org:liu-48035 | |
| 003 | SwePub | |
| 008 | 091011s2007 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-480352 URI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Beshkova, Milenau Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)milbe24 |
| 245 | 1 0 | a Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates |
| 264 | 1 | c 2007 |
| 338 | a print2 rdacarrier | |
| 520 | a Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68. | |
| 653 | a AlN | |
| 653 | a sublimation epitaxy | |
| 653 | a HRXRD | |
| 653 | a RBS | |
| 653 | a TECHNOLOGY | |
| 653 | a TEKNIKVETENSKAP | |
| 700 | 1 | a Grigorov, K. G.4 aut |
| 700 | 1 | a Zakhariev, Z.4 aut |
| 700 | 1 | a Abrashev, M.4 aut |
| 700 | 1 | a Massi, M.4 aut |
| 700 | 1 | a Yakimova, Rositsau Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)rosia15 |
| 710 | 2 | a Linköpings universitetb Tekniska högskolan4 org |
| 773 | 0 | t Journal of Optoelectronics and Advanced Materialsg 9:1, s. 213-216q 9:1<213-216x 1454-4164x 1841-7132 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48035 |
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- Beshkova, Milena
- Grigorov, K. G.
- Zakhariev, Z.
- Abrashev, M.
- Massi, M.
- Yakimova, Rosits ...
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- Linköpings universitet
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