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A Wafer-Scale Self-...
A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC
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- Elahipanah, Hossein, 1982- (författare)
- KTH,Elektronik,Electronics
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- Asadollahi, Ali (författare)
- KTH,Elektronik
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- Ekström, Mattias (författare)
- KTH,Elektronik
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- Salemi, Arash, 1976- (författare)
- KTH,Elektronik
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- Zetterling, Carl-Mikael (författare)
- KTH,Elektronik
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- Östling, Mikael (författare)
- KTH,Elektronik
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(creator_code:org_t)
- ECS, 2017
- 2017
- Engelska.
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Ingår i: ECS Journal of Solid State Science and Technology. - : ECS. - 2162-8769 .- 2162-8777. ; 6:4, s. 197-200
- Relaterad länk:
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https://kth.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- A self-aligned nickel (Ni) silicide process for n-type Ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5×10-6 Ω·cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale, which saves time and cost.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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