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Conductivity modula...
Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes
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- Salemi, Arash (författare)
- KTH
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- Elahipanah, Hossein (författare)
- KTH
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- Zetterling, Carl-Mikael, 1966- (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Skolan för elektroteknik och datavetenskap (EECS)
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(creator_code:org_t)
- Trans Tech Publications Inc. 2018
- 2018
- Engelska.
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Ingår i: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017. - : Trans Tech Publications Inc.. - 9783035711455 ; , s. 568-572
- Relaterad länk:
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https://www.eag.com/...
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- 4H-SiC PiN diode
- Conductivity modulation
- Differential on-resistance
- Forward voltage drop
- Implantation-free
- Ultra-high-voltage
- Diodes
- Heterojunction bipolar transistors
- Leakage currents
- Modulation
- Nitrogen compounds
- Semiconductor junctions
- Silicon carbide
- Forward voltage drops
- On-resistance
- SiC PiN diodes
- Ultra high voltage
- Power semiconductor diodes
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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