WFRF:(Liu Ting Wei)
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Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
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- Darakchieva, Vanya (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Schubert, M (author)
- University of Nebraska
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- Hofmann, T (author)
- University of Nebraska
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- (creator_code:org_t)
- AIP Publishing, 2009
- 2009
- English.
- In: APPLIED PHYSICS LETTERS. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 95:20, s. 202103-
- Journal article (peer-reviewed)
Abstract
Subject headings
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- The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.
Keyword
- accumulation layers
- electron density
- electron mobility
- III-V semiconductors
- indium compounds
- semiconductor thin films
- surface charging
- wide band gap semiconductors
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- art (subject category)
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- Hofmann, T
- Monemar, Bo
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- Liu, Ting-Wei
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- Chen, Li-Chyong
- Schaff, W J
- Takagi, Y
- Nanishi, Y
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