The electronic properties of transition metal hydrogen complexes in silicon

• The electrical levels of various combinations of transition metal-Hn defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap t2 manifold of states due to the impurity. Passive defects are identified

Ämnesord

NATURVETENSKAP  -- Matematik -- Beräkningsmatematik (hsv//swe)

NATURAL SCIENCES  -- Mathematics -- Computational Mathematics (hsv//eng)

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Scientific Computing

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