Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient

• A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration Of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no: degradation during subsequent growth. Increasing the growth temperature after the base from 500 degreesC to 680 degreesC within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the de gain and the turn-on voltage.

Nyckelord

GaInAs : C

metalorganic-VPE

carbon

nitrogen

CBr4

HBT

TBA

TBP

passivation

annealing

integration

OEIC

MOCVD

molecular-beam epitaxy

carrier gas

hbts

gaas

deposition

mocvd

performance

fabrication

precursors

hydrogen

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