Single InAs/GaAs quantum dot spectroscopy in a lateral electric field

• We report on the comprehensive study of InAs/GaAs single quantum dots subjected to a lateral external electric field by means of micro-photoluminescence (μ-PL) technique. The results obtained on the exciton in the μ-PL spectra of a single dot demonstrate a considerable PL intensity enhancement (up to a factor of 4) of the dot as well as a redistribution of the excitonic lines when an electric field is applied. The latter fact exhibits an effective charge reconfiguration of the dot from a purely negatively charged to a neutral state. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer at low temperature and bias.

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