A 4H-SiC BJT with an epitaxially regrown extrinsic base layer

• 4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

bipolar junction transistor

extrinsic base

epitaxial regrowth

TECHNOLOGY

TEKNIKVETENSKAP

Electronics

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)