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Dry etching and met...
Dry etching and metallization schemes in a GaN/SiC heterojunction device process
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Danielsson, Erik (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Lee, S. K. (författare)
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Linthicum, K. J. (författare)
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Thomson, D. B. (författare)
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Nam, O. -H (författare)
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Davis, R. F. (författare)
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(creator_code:org_t)
- Trans Tech Publications Inc. 2000
- 2000
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 338-342, s. 1049-1052
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Dry etching and metallization schemes are described for a GaN/SiC heterojunction. GaN was reactive ion etched in a chlorine based chemistry (Cl2/Ar), and an ICP etch was used on 4H-SiC using a fluorine based chemistry (SF6/Ar/O2). The etch rates obtained on GaN was above 400 nm/min. High sample temperature from self heating and large dc-bias was the probable cause for the high etch rate. The ICP etch rate on SiC approached 320 nm/min, and the etch selectivity to GaN was >100. The metallization was based on Ti for both n-GaN and p-SiC. TLM and Kelvin structures were used to extract the specific contact resistivity, ÏC. After a 950 °C anneal in N2 ÏC on the GaN samples were below 1·10-6 Ωcm2 for sputtered contacts in room temperature, and an order of magnitude higher with evaporation. On p-SiC no ohmic behavior was found with a doping of 4·1018 cm-3, but the same contact metallization on highly doped areas (>1020 cm-3) showed ohmic behavior with ÏC below 10-4 Ωcm2.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Chlorine
- Dry etching
- Electric contacts
- Fluorine
- Metallizing
- Nitrides
- Plasma etching
- Reactive ion etching
- Semiconducting gallium compounds
- Semiconducting silicon compounds
- Silicon carbide
- Sputter deposition
- Etch selectivity
- Gallium nitride
- Heterojunctions
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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