Sökning: WFRF:(Persson Karl Magnus) > Surface and core co...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 03849naa a2200589 4500 | |
001 | oai:lup.lub.lu.se:076ed1c9-e573-4779-a934-a6c4817ae792 | |
003 | SwePub | |
008 | 160401s2013 | |||||||||||000 ||eng| | |
009 | oai:DiVA.org:kth-127503 | |
024 | 7 | a https://lup.lub.lu.se/record/40430732 URI |
024 | 7 | a https://doi.org/10.1063/1.48138502 DOI |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1275032 URI |
040 | a (SwePub)lud (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a art2 swepub-publicationtype |
072 | 7 | a ref2 swepub-contenttype |
100 | 1 | a Persson, Karl-Magnusu Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)eit-krp |
245 | 1 0 | a Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors |
264 | 1 | b AIP Publishing,c 2013 |
338 | a electronic2 rdacarrier | |
500 | a QC 20130902 | |
520 | a By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
650 | 7 | a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng |
653 | a Nanowire | |
653 | a Noise | |
653 | a mobility fluctuations | |
653 | a number fluctutations | |
653 | a InAs | |
653 | a Transistor | |
653 | a MOSFET | |
653 | a FET | |
653 | a high-k | |
653 | a hf02 | |
653 | a al203 | |
653 | a Low-Frequency Noise | |
653 | a Electrical Engineering | |
700 | 1 | a Malm, B. Gunnaru KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u13lag9j |
700 | 1 | a Wernersson, Lars-Eriku Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-lwe |
710 | 2 | a Institutionen för elektro- och informationsteknikb Institutioner vid LTH4 org |
773 | 0 | t Applied Physics Lettersd : AIP Publishingg 103:3q 103:3x 0003-6951x 1077-3118 |
856 | 4 | u https://portal.research.lu.se/files/2398051/4330777.pdfx primaryx freey FULLTEXT |
856 | 4 | u http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6560855%26userType%3Dinst&denyReason=-133&arnumber=6560855&productsMatched=null&userType=insty FULLTEXT |
856 | 4 | u http://dx.doi.org/10.1063/1.4813850y FULLTEXT |
856 | 4 | u https://lup.lub.lu.se/search/files/2398051/4330777.pdf |
856 | 4 | u https://kth.diva-portal.org/smash/get/diva2:644749/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 8 | u https://lup.lub.lu.se/record/4043073 |
856 | 4 8 | u https://doi.org/10.1063/1.4813850 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127503 |
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