Correlation between material quality and high frequency performance of graphene field-effect transistors

• Correlations between material quality, equivalent circuit and high frequency parameters of the graphene field-effect transistors, such as mobility, contact resistivity, carrier velocity, drain conductivity, transit frequency and maximum frequency of oscillation, have been established via applying drain resistance, velocity and saturation velocity models. The correlations allow for understanding dominant limitations of the high frequency performance of transistors, which clarifies the ways of their further development. In particular, the relatively high drain conductivity is currently main limiting factor, which, however, can be counterbalanced by increasing the carrier velocity via operating transistors at higher fields, in the velocity saturation mode.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Medicinteknik -- Medicinsk laboratorie- och mätteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Medical Engineering -- Medical Laboratory and Measurements Technologies (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Samhällsbyggnadsteknik -- Geoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Civil Engineering -- Geotechnical Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

field effect transistors

spatial inhomogeneity

graphene

transit frequency

contact resistances

microwave electronics

maximum frequency of oscillation

high frequency

Publication and Content Type

kon (subject category)

vet (subject category)