Sökning: L773:1557 1939 OR L773:1557 1947 >
A Parameter Extract...
Abstract
Ämnesord
Stäng
- Graphene field-effect transistors have now been around for more than a decade and their transfer characteristics extensively used for device characterization. Model parameters like low-field charge-carrier mobility and device contact/series resistance have often been the main interest. However, not until recently have the methods for device characterization themselves been the focus of research publications. In this paper, I report on a structured methodology for extracting and validating the extracted GFET model parameter values based on the physics of field-effect transistors in general and of graphene field-effect transistors in particular. During the extraction process the GFET resistance is divided into two parts, a constant part, and a gate-voltage-dependent part where the constant part often has been believed to represent the series/contact resistance. However, part of it depends on the channel length and contains first-order information about mobility degradation. Finally, I show that the main influence of the quantum capacitance can be captured by an equivalent oxide thickness replacing the insulator thickness.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- model parameter extraction
- series/contact resistance
- mobility degradation.
- graphene field-effect transistors
- charge-carrier mobility
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas