WFRF:(Qvarford M.)
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Metal-dielectric transition in Ba0.6K0.4BiO3-y single crystals studied by scanning photoelectron microscopy
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- Zakharov, A. A. (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Johansson, U. (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Leandersson, M. (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Qvarford, M. (author)
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- (creator_code:org_t)
- 1997
- 1997
- English.
- In: Physical Review B (Condensed Matter). - 0163-1829. ; 56:10
- Journal article (peer-reviewed)
Abstract
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- The electronic structure of Ba0.6K0.4BiO3-y single crystals has been studied using a scanning photoelectron microscope with a lateral resolution in the one micrometer range. It is possible to change the oxygen content (y) and convert the surface from the metallic to the dielectric state presumably by breaking the Bi-O bonds by using the focused zero-order light to irradiate the sample surface. The electronic states close to the Fermi level after such a treatment show a different doping dependence as compared to the case of potassium doping. By imaging the surface on the micrometer scale we find significant variations in the valence band intensity over the surface and observe a rather large intensity of the density of states close to the Fermi level. This will have a large impact on the discussions of dynamical lattice distortion and pseudogap behavior in the metallic phase.
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- Zakharov, A. A.
- Johansson, U.
- Leandersson, M.
- Nylén, H.
- Qvarford, M.
- Lindau, I.
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- Nyholm, R.
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