Study of the stability of 4H-SiC detectors by thermal neutron irradiation

• Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of10B inside the aluminum metallic contact. The first detector shows a high leakage current after10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection [1,2]

Subject headings

NATURVETENSKAP  -- Fysik -- Acceleratorfysik och instrumentering (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Accelerator Physics and Instrumentation (hsv//eng)

Keyword

4H-SiC

Implantation

Neutron converter layer

Pn diodes

Thermal neutrons

Charged particles

Interference suppression

Ion implantation

Irradiation

Neutron sources

Neutrons

Nuclear reactors

Radiation detectors

Semiconductor detectors

Signal to noise ratio

Silicon carbide

Implantation parameters

Low signal-to-noise ratio

Neutron converters

P-n Diode

Pulse height spectrum

Thermal-neutron flux

Neutron irradiation

Publication and Content Type

ref (subject category)

kon (subject category)