Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

• Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si(0.85)Ge(0.15) virtual substrate, Si(0.7)Ge(0.3) base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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