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Enablers for Overcu...
Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters : An Overview
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- Bhadoria, Shubhangi (författare)
- KTH,Elkraftteknik
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- Dijkhuizen, Frans (författare)
- KTH,Elkraftteknik,Hitachi Energy Res, SE-72178 Västerås, Sweden.
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- Raj, Rishabh (författare)
- KTH,Skolan för elektroteknik och datavetenskap (EECS)
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- Wang, Xiongfei (författare)
- KTH,Elkraftteknik
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- Xu, Qianwen, 1992- (författare)
- KTH,Elkraftteknik
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- Matioli, Elison (författare)
- EPFL Institute of Electrical Engineering, Switzerland,Ecole Polytech Fed Lausanne EPFL, Inst Elect Engn, CH-1015 Lausanne, Switzerland.
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- Kostov, Konstantin Stoychev (författare)
- RISE,Smart hårdvara,Res Inst Sweden, S-16440 Stockholm, Sweden.
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- Nee, Hans-Peter, 1963- (författare)
- KTH,Elkraftteknik
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers Inc. 2023
- 2023
- Engelska.
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Ingår i: IEEE transactions on power electronics. - : Institute of Electrical and Electronics Engineers Inc.. - 0885-8993 .- 1941-0107. ; 38:3, s. 3569-3589
- Relaterad länk:
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the overcurrent performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials, which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for overcurrent related temperatures in excess of 200°C are discussed. This article also discusses potential technologies, which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase-change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase-change materials, which can be considered for high-temperature operations.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Bonding techniques
- high temperature
- new layouts
- overcurrent (OC)
- packaging
- parasites
- phase-change materials (PCMs)
- power modules
- wide band gap semiconductors
- Chip scale packages
- Energy gap
- High temperature applications
- High temperature operations
- Microprocessor chips
- Power converters
- Power MOSFET
- Schottky barrier diodes
- Substrates
- Heating system
- Highest temperature
- Insulatedgate bipolar transistor (IGBTs)
- MOS-FET
- MOSFETs
- Multi chip modules
- New layout
- Overcurrents
- Parasite-
- Power module
- Schottky diodes
- Wide-band-gap semiconductor
- Silicon carbide
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Bhadoria, Shubha ...
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Dijkhuizen, Fran ...
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Raj, Rishabh
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Wang, Xiongfei
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Xu, Qianwen, 199 ...
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Matioli, Elison
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Kostov, Konstant ...
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Nee, Hans-Peter, ...
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TEKNIK OCH TEKNO ...
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