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Low-pressure sublim...
Low-pressure sublimation epitaxy of AlN films - growth and characterization
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- Beshkova, Milena (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Zakhariev, Z. (author)
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Abrashev, M.V. (author)
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- Birch, Jens, 1960- (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
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In: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 76, s. 143-146
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.
Keyword
- AIN
- sublimation
- morphology
- XRD
- Raman
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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