Low-pressure sublimation epitaxy of AlN films - growth and characterization

Beshkova, MilenaLinköpings universitet,Tekniska högskolan,Halvledarmaterial (författare)

Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.

Zakhariev, Z. (författare)
Abrashev, M.V. (författare)
Birch, Jens,1960-Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)jenbi91 (författare)
Kakanakova-Georgieva, Anelia,1970-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)aneka59 (författare)
Yakimova, Rositsa,1942-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)rosia15 (författare)
Linköpings universitetTekniska högskolan (creator_code:org_t)

Av författaren/redakt...: Beshkova, Milena; Zakhariev, Z.; Abrashev, M.V.; Birch, Jens, 196 ...; Kakanakova-Georg ...; Yakimova, Rosits ...

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