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Search: L773:0013 5194 OR L773:1350 911X > (2010-2014) > High-speed 850 nm V...

High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s

Westbergh, Petter, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Safaisini, Rashid, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Haglund, Erik, 1985 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Kögel, Benjamin, 1979 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Gustavsson, Johan, 1974 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Larsson, Anders, 1957 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Geen, M. (author)
Lawrence, Roderick (author)
Joel, A. (author)
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 (creator_code:org_t)
Institution of Engineering and Technology (IET), 2012
2012
English.
In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 48:18, s. 1145-U178
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A new generation of high-speed oxide confined 850 nm vertical cavity surface-emitting lasers is presented. A record high modulation bandwidth of 28 GHz is achieved and error-free data transmission at bit-rates up to 44 Gbit/s is demonstrated.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Keyword

photon lifetime

Publication and Content Type

art (subject category)
ref (subject category)

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