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Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Winters, Michael, 1986 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
Habibpour, Omid, 1979 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
Gueorguiev Ivanov, Ivan (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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ul-Hassan, Jawad (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Janzén, Erik (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Zirath, Herbert, 1955 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
Rorsman, Niklas, 1964 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
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 (creator_code:org_t)
Elsevier BV, 2015
2015
English.
In: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 81:1, s. 96-104
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Epitaxial graphene is grown on semi-insulating (SI) 4H-SiC in a hot wall CVD reactor by graphitization and in-situ intercalation with (H)ydrogen. A holistic material characterization is performed in order to ascertain the number of layers, layer uniformity, and electron transport properties of the epi-layers via electronic test structures and Raman spectroscopy. Bilayer graphene field effect transistors (GFETs) are fabricated using a full electron beam lithography (EBL) process which is optimized for low contact resistances of r(c)

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)
NATURVETENSKAP  -- Kemi -- Fysikalisk kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Physical Chemistry (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)
NATURVETENSKAP  -- Kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

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