Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

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Chen, Yen-Ting (författare): Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten

Karlsson, K. Fredrik (författare): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

Birch, Jens (författare): Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten

Holtz, Per-Olof (författare): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

(creator_code:org_t)

2016-02-15
2016
Engelska.
Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 6:21482, s. 1-7

Relaterad länk:: https://liu.diva-por... (primary) (Raw object); visa fler...; https://www.nature.c...; https://urn.kb.se/re...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

Stäng

Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra were acquired for different positions of the SNOM tip on the nanorod, corresponding to the origins of the well-defined luminescence peaks, each being related to recombination-centers. The phenomenon originated from surface oxide by direct comparison of two nanorods with similar diameters in a single map has been observed and investigated.

Av författaren/redakt...: Chen, Yen-Ting; Karlsson, K. Fre ...; Birch, Jens; Holtz, Per-Olof

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