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Room-temperature op...
Room-temperature operation of transistor vertical-cavity surface-emitting laser
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- Yu, Xingang (author)
- KTH,Integrerade komponenter och kretsar
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- Xiang, Yu (author)
- KTH,Integrerade komponenter och kretsar
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- Berggren, Jesper (author)
- KTH,Integrerade komponenter och kretsar
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- Zabel, Thomas (author)
- KTH,Integrerade komponenter och kretsar
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- Hammar, Mattias (author)
- KTH,Integrerade komponenter och kretsar
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- Akram, Muhammad Nadeem (author)
- Vestfold University Collage, Tönsberg, Norge
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- Shi, Wei (author)
- University of British Columbia, Vancouver, Canada
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- Chrostowski, Lukas (author)
- University of British Columbia, Vancouver, Canade
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(creator_code:org_t)
- 2013-01
- 2013
- English.
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 49:3, s. 208-209
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Abstract
Subject headings
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- The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50 degrees C.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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