Sökning: WFRF:(Hellström P.) > On the role of Coul...
Fältnamn | Indikatorer | Metadata |
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000 | 02854naa a2200433 4500 | |
001 | oai:DiVA.org:kth-83796 | |
003 | SwePub | |
008 | 120213s2011 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-837962 URI |
024 | 7 | a https://doi.org/10.1063/1.36694902 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Thomas, S. M.4 aut |
245 | 1 0 | a On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors |
264 | 1 | b AIP Publishing,c 2011 |
338 | a print2 rdacarrier | |
500 | a QC 20120214 | |
520 | a In this work, the impact of the local and remote Coulomb scattering mechanisms on electron and hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf(0.4)Si(0.6)O/SiO(2) gate stacks have been measured at 300 K and 4 K. At 300 K, electron mobility is degraded below that of bulk MOSFETs in the literature, whereas hole mobility is comparable. The 4 K electron and hole mobilities have been modeled in terms of ionized impurity, local Coulomb, remote Coulomb and local roughness scattering. An existing model for remote Coulomb scattering from a polycrystalline silicon gate has been adapted to model remote Coulomb scattering from a high-kappa/SiO(2) gate stack. Subsequently, remote charge densities of 8 x 10(12) cm(-2) at the Hf(0.4)Si(0.6)O/SiO(2) interface were extracted and shown to be the dominant Coulomb scattering mechanism for both electron and hole mobilities at 4 K. Finally, a Monte Carlo simulation showed remote Coulomb scattering was responsible for the degraded 300 K electron mobility. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
700 | 1 | a Prest, M. J.4 aut |
700 | 1 | a Whall, T. E.4 aut |
700 | 1 | a Leadley, D. R.4 aut |
700 | 1 | a Toniutti, P.4 aut |
700 | 1 | a Conzatti, F.4 aut |
700 | 1 | a Esseni, D.4 aut |
700 | 1 | a Donetti, L.4 aut |
700 | 1 | a Gamiz, F.4 aut |
700 | 1 | a Lander, R. J. P.4 aut |
700 | 1 | a Vellianitis, G.4 aut |
700 | 1 | a Hellström, Per-Eriku KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1wc1lgb |
700 | 1 | a Östling, Mikaelu KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1u0kle4 |
710 | 2 | a KTHb Integrerade komponenter och kretsar4 org |
773 | 0 | t Journal of Applied Physicsd : AIP Publishingg 110:12, s. 124503-q 110:12<124503-x 0021-8979x 1089-7550 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-83796 |
856 | 4 8 | u https://doi.org/10.1063/1.3669490 |
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