Thin film plate acoustic resonators for integrated microwave power oscillator applications

• Two-port film plate acoustic resonators (FPAR) devices operating on the lowest order symmetric Lamb wave mode (S0) in C-oriented AlN membranes on Si were fabricated and tested for their power handling capabilities in a feedback-loop power oscillator circuit. The FPAR was operated at an incident power level of 24 dBm for several weeks without performance degradation. Its flicker noise constant was calculated from close-in phase noise data as αR=2.1×10^−36/Hz. The results indicate that IC-compatible S0 FPARs are well suited for integrated microwave oscillators with thermal noise floor (TNF) levels below −175 dBc/Hz.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Powe oscillator

low noise

MEMS

piezo

Other electrical engineering, electronics and photonics

Övrig elektroteknik, elektronik och fotonik

Teknisk fysik med inriktning mot mikrosystemteknik

Engineering Science with specialization in Microsystems Technology

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Publication and Content Type

ref (subject category)

art (subject category)