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  • Valcheva, E. (author)

Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

  • Article/chapterEnglish2001

Publisher, publication year, extent ...

  • 2001
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-47375
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47375URI
  • https://doi.org/10.1016/S0921-5107(00)00676-0DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.

Subject headings and genre

  • Doping distribution
  • GaN
  • HVPE
  • Strain
  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Paskova, TanjaLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)tanpa12 (author)
  • Abrashev, M.V.Faculty of Physics, Sofia University, 5, J. Bourchier blvd., Sofia 1164, Bulgaria (author)
  • Persson, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25 (author)
  • Paskov, PlamenLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)plapa31 (author)
  • Goldys, E.M.Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, NSW 2109, Australia (author)
  • Beccard, R.Aixtron AG, D-52072 Aachen, Germany (author)
  • Heuken, M.Aixtron AG, D-52072 Aachen, Germany (author)
  • Monemar, BoLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)bomo46 (author)
  • Linköpings universitetTekniska högskolan (creator_code:org_t)

Related titles

  • In:Materials Science & Engineering82:1-3, s. 35-380921-51071873-4944

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