Enhancing the efficiency and stability of perovskite solar cells based on moisture-resistant dopant free hole transport materials by using a 2D-BA2PbI4 interfacial layer

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Fältnamn	Indikatorer	Metadata
000		04325naa a2200397 4500
001		oai:DiVA.org:uu-469013
003		SwePub
008		220316s2022 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4690132 URI
024	7	a https://doi.org/10.1039/d1cp04863e2 DOI
040		a (SwePub)uu
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Ghoreishi, Farzaneh S.u Uppsala universitet,Fysikalisk kemi,Tarbiat Modares Univ, Dept Nanotechnol Engn, Tehran 14115111, Iran4 aut
245	1 0	a Enhancing the efficiency and stability of perovskite solar cells based on moisture-resistant dopant free hole transport materials by using a 2D-BA2PbI4 interfacial layer
264		c 2022
264	1	b Royal Society of Chemistry (RSC),c 2022
338		a print2 rdacarrier
500		a Title in Web of Science: Enhancing the efficiency and stability of perovskite solar cells based on moisture-resistant dopant free hole transport materials by using a 2D-BA(2)PbI(4) interfacial layer
520		a In this work, the photovoltaic performance and stability of perovskite solar cells (PSCs) based on a dopant-free hole transport layer (HTL) are efficiently improved by inserting a two-dimensional (2D) interfacial layer. The benzyl ammonium lead iodide (BA2PbI4) 2D perovskite is used as an interfacial layer between the 3D CH3NH3PbI3 perovskite and two moisture-resistant dopant-free HTLs including poly[[2,3-bis(3-octyloxyphenyl)-5,8-quinoxalinediyl]-2,5-thiophenediyl] (TQ1) and poly(3-hexylthiophene) (P3HT). TQ1 with a facile synthesis procedure has a higher moisture resistivity compared to P3HT which can improve the stability of PSCs. The 2D BA2PbI4 perovskite with a less-volatile bulkier organic cation efficiently passivates the defects at the perovskite/HTL interface, leading to 11.95% and 15.04% efficiency for the modified TQ1 and P3HT based cells, respectively. For a better understanding, the structural, optical, and electrical properties of PSCs comprising P3HT and TQ1 HTLs with and without interface modification are studied. The interface modified PSCs show slower open-circuit voltage decay and longer carrier lifetimes compared to unmodified cells. In addition, impedance spectroscopy reveals lower charge transport resistance and higher recombination resistance for the modified devices, which could be associated with the modification of the interface between the 3D CH3NH3PbI3 perovskite and HTL caused by the 2D interfacial layer. Also after aging under ambient conditions for about 800 hours, the modified PCSs retain more than 80% of their initial PCEs. These results give us the hope of achieving simpler, cheaper, and more stable PSCs with dopant-free HTLs through 2D interfacial layers, which have great potential for commercialization.
650	7	a NATURVETENSKAPx Kemix Materialkemi0 (SwePub)104032 hsv//swe
650	7	a NATURAL SCIENCESx Chemical Sciencesx Materials Chemistry0 (SwePub)104032 hsv//eng
650	7	a NATURVETENSKAPx Kemix Fysikalisk kemi0 (SwePub)104022 hsv//swe
650	7	a NATURAL SCIENCESx Chemical Sciencesx Physical Chemistry0 (SwePub)104022 hsv//eng
700	1	a Ahmadi, Vahidu Tarbiat Modares Univ, Dept Nanotechnol Engn, Tehran 14115111, Iran.;Tarbiat Modares Univ, Dept Elect & Comp Engn, Tehran 14115194, Iran.4 aut
700	1	a Alidaei, Maryamu Tarbiat Modares Univ, Dept Elect & Comp Engn, Tehran 14115194, Iran.4 aut
700	1	a Arabpour Roghabadi, Farzanehu Tarbiat Modares Univ, Dept Elect & Comp Engn, Tehran 14115194, Iran.;Tarbiat Modares Univ, Dept Chem Engn, Tehran 14115114, Iran.4 aut
700	1	a Samadpour, Mahmoudu KN Toosi Univ Technol, Dept Phys, Tehran 1541849611, Iran.4 aut
700	1	a Poursalehi, Rezau Tarbiat Modares Univ, Dept Nanotechnol Engn, Tehran 14115111, Iran.4 aut
700	1	a Johansson, Erik M. J.u Uppsala universitet,Fysikalisk kemi4 aut0 (Swepub:uu)erjoh367
710	2	a Uppsala universitetb Fysikalisk kemi4 org
773	0	t Physical Chemistry, Chemical Physics - PCCPd : Royal Society of Chemistry (RSC)g 24:3, s. 1675-1684q 24:3<1675-1684x 1463-9076x 1463-9084
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-469013
856	4 8	u https://doi.org/10.1039/d1cp04863e

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Av författaren/redakt...: Ghoreishi, Farza ...; Ahmadi, Vahid; Alidaei, Maryam; Arabpour Roghaba ...; Samadpour, Mahmo ...; Poursalehi, Reza; visa fler...; Johansson, Erik ...; visa färre...

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