Room-temperature semiconductor heterostructure refrigeration

Chao, Koung-An (författare): Lund University,Lunds universitet,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Larsson, Magnus (författare): Lund University,Lunds universitet,Matematisk fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Mathematical Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Mal'shukov, AG (författare)

(creator_code:org_t)

AIP Publishing, 2005
2005
Engelska.
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87:2

Relaterad länk:: http://dx.doi.org/10...; visa fler...; https://lup.lub.lu.s...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

Stäng

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5 - 7 K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

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