Sökning: WFRF:(Nee Hans Peter 1963 ) >
Simulation Study of...
Simulation Study of the Effect of Threshold Voltage Hysteresis on Switching Characteristics of SiC MOSFETs
-
- Cai, Yumeng (författare)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China
-
- Xu, Hao (författare)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China
-
- Sun, Peng (författare)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China
-
visa fler...
-
- Deng, Erping (författare)
- Hefei University of Technology, China
-
- Zhao, Zhibin (författare)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China
-
- Li, Xuebao (författare)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China
-
- Nee, Hans-Peter, 1963- (författare)
- KTH,Elkraftteknik
-
visa färre...
-
(creator_code:org_t)
- Mesago PCIM GmbH, 2023
- 2023
- Engelska.
-
Ingår i: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023. - : Mesago PCIM GmbH. ; , s. 212-216
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.3...
-
visa färre...
Abstract
Ämnesord
Stäng
- The effect of VTH hysteresis on switching characteristics of SiC MOSFETs is investigated by TCAD in this paper. A device-circuit mixed-mode simulation model is built to simulate VTH hysteresis. The result illustrates that VTH hysteresis decreases VTH and increases channel mobility, which leads to earlier turn-on and larger ID. Moreover, the higher the interface state density (Dit) is, the more obvious the transient effect. However, ID remains unchanged with VTH hysteresis and it decreases with higher Dit without considering VTH hysteresis. Therefore, the VTH hysteresis is beneficial and the findings can be useful for distributing Dit when modeling the chip process.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)