Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition

Huang, Jing-JiaLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,SGL Carbon GmbH, Germany (författare)

Funding Agencies|SGL CARBON GmbH
In this work, silicon carbide (SiC) coatings were successfully grown by pulsed chemical vapor deposition (CVD). The precursors silicon tetrachloride (SiCl4) and ethylene (C2H4) were not supplied in a continuous flow but were pulsed alternately into the growth chamber with H-2 as a carrier and a purge gas. A typical pulsed CVD cycle was SiCl4 pulse-H-2 purge-C2H4 pulse-H-2 purge. This led to growth of superconformal SiC coatings, which could not be obtained under similar process conditions using a constant flow CVD process. We propose a two-step framework for SiC growth via pulsed CVD. During the SiCl4 pulse, a layer of Si is deposited. In the following C2H4 pulse, this Si layer is carburized, and SiC is formed. The high chlorine surface coverage after the SiCl4 pulse is believed to enable superconformal growth via a growth inhibition effect.

Militzer, ChristianSGL Carbon GmbH, Germany (författare)
Wijayawardhana, CharlesLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,SGL Carbon GmbH, Germany(Swepub:liu)chawi54 (författare)
Forsberg, UrbanLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)urbfo25 (författare)
Pedersen, HenrikLinköpings universitet,Kemi,Tekniska fakulteten(Swepub:liu)henpe50 (författare)
Linköpings universitetTunnfilmsfysik (creator_code:org_t)

Ingår i:Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films: A V S AMER INST PHYSICS41:30734-21011520-8559

Av författaren/redakt...: Huang, Jing-Jia; Militzer, Christ ...; Wijayawardhana, ...; Forsberg, Urban; Pedersen, Henrik

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