Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

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Fältnamn	Indikatorer	Metadata
000		04195naa a2200649 4500
001		oai:DiVA.org:uu-281226
003		SwePub
008		160321s2016 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-2812262 URI
024	7	a https://doi.org/10.1116/1.49414112 DOI
040		a (SwePub)uu
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Hägglund, Carl,d 1975-u Uppsala universitet,Fasta tillståndets elektronik,Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA,Thin film solar cells4 aut0 (Swepub:uu)carha577
245	1 0	a Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition
264		c 2016-02-08
264	1	b American Vacuum Society,c 2016
338		a electronic2 rdacarrier
520		a A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with ALD requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and X-ray diffraction. At the low temperatures used for deposition (150 °C) there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnOx matrix is deduced. Post-annealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn2SnO4. Annealing to 800 °C results in films containing crystalline Zn2SnO4, or multilayered films of crystalline ZnO, Zn2SnO4 and SnO2 phases, depending on the bilayer period.
650	7	a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Nanoteknik0 (SwePub)2102 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Nano-technology0 (SwePub)2102 hsv//eng
653		a zinc compounds
653		a X-ray diffraction
653		a semiconductor growth
653		a surface segregation
653		a ion-surface impact
653		a atomic layer deposition
653		a wide band gap semiconductors
653		a laminates
653		a tin compounds
653		a nanofabrication
653		a nanocomposites
653		a annealing
653		a Engineering Science with specialization in Electronics
653		a Teknisk fysik med inriktning mot elektronik
653		a Engineering Science with specialization in Materials Science
653		a Teknisk fysik med inriktning mot materialvetenskap
700	1	a Grehl, Thomas4 aut
700	1	a Tanskanen, Jukka T.4 aut
700	1	a Yee, Ye Sheng4 aut
700	1	a Mullings, Marja N.4 aut
700	1	a Mackus, Adriaan J. M.4 aut
700	1	a MacIsaac, Callisto4 aut
700	1	a Clemens, Bruce M.4 aut
700	1	a Brongersma, Hidde H.4 aut
700	1	a Bent, Stacey F.4 aut
710	2	a Uppsala universitetb Fasta tillståndets elektronik4 org
773	0	t Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Filmsd : American Vacuum Societyg 34:2q 34:2x 0734-2101x 1520-8559
856	4	u http://scitation.aip.org/content/avs/journal/jvsta/34/2/10.1116/1.4941411
856	4	u https://uu.diva-portal.org/smash/get/diva2:913340/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print
856	4	u https://doi.org/10.1116/1.4941411
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-281226
856	4 8	u https://doi.org/10.1116/1.4941411

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Av författaren/redakt...: Hägglund, Carl, ...; Grehl, Thomas; Tanskanen, Jukka ...; Yee, Ye Sheng; Mullings, Marja ...; Mackus, Adriaan ...; visa fler...; MacIsaac, Callis ...; Clemens, Bruce M ...; Brongersma, Hidd ...; Bent, Stacey F.; visa färre...

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