Sökning: WFRF:(Dalmas J.) > Pseudogap structure...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 02330naa a2200433 4500 | |
001 | oai:DiVA.org:kth-22645 | |
003 | SwePub | |
008 | 100810s2003 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-226452 URI |
024 | 7 | a https://doi.org/10.1016/S0169-4332(03)00145-42 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Suchodolskis, A.4 aut |
245 | 1 0 | a Pseudogap structure in icosahedral ZnMgY and ZnMgHo quasicrystals |
264 | 1 | c 2003 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 | |
520 | a The results of a photoemission study of icosahedral single-grain ZnMg(Y, Ho) quasicrystals and their crystalline approximant Zn2Mg are presented. Synchrotron radiation photoemission measurements have been performed on in situ cleaved samples at low temperature of approximate to90 K and 10(-10) mbar pressure. The spectra obtained indicate simple metal-type valence bands (VB) with distinct Fermi edge cutoff. Analysis of the Fermi edge spectra reveals the presence of a pseudogap in i-ZnMg(Y, Ho) quasicrystals. The pseudogap corresponds to a rather sharp DOS dip at the Fermi level with th approximate to50% (of the normal DOS) depth and the approximate to0.8 eV width. The values of i-ZnMg(Y, Ho) pseudogap parameters are comparable with those of other quasicrystals. | |
653 | a quasicrystals | |
653 | a pseudogap | |
653 | a photoemission spectroscopy | |
653 | a energy | |
700 | 1 | a Assmus, W.4 aut |
700 | 1 | a Cechavicius, B.4 aut |
700 | 1 | a Dalmas, J.4 aut |
700 | 1 | a Giovanelli, L.4 aut |
700 | 1 | a Göthelid, Matsu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u1uq5dqb |
700 | 1 | a Karlsson, Ulf O.u KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u19hnak8 |
700 | 1 | a Karpus, V.4 aut |
700 | 1 | a Le Lay, G.4 aut |
700 | 1 | a Sterzel, R.4 aut |
700 | 1 | a Uhrig, E.4 aut |
710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
773 | 0 | t Applied Surface Scienceg 212, s. 485-490q 212<485-490x 0169-4332x 1873-5584 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22645 |
856 | 4 8 | u https://doi.org/10.1016/S0169-4332(03)00145-4 |
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