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WFRF:(Hilfiker Matthew)
 

Sökning: WFRF:(Hilfiker Matthew) > Anisotropic dielect...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003758naa a2200397 4500
001oai:DiVA.org:liu-174662
003SwePub
008210401s2021 | |||||||||||000 ||eng|
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1746622 URI
0247 a https://doi.org/10.1063/5.00314242 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
1001 a Hilfiker, Matthewu Univ Nebraska, NE 68588 USA4 aut
2451 0a Anisotropic dielectric functions, band-to-band transitions, and critical points in alpha-Ga2O3
264 1b AMER INST PHYSICS,c 2021
338 a print2 rdacarrier
500 a Funding Agencies|National Science FoundationNational Science Foundation (NSF) [DMR 1808715]; ACCESS, an AFOSR Center of Excellence [FA9550-18-1-0529]; Air Force Office of Scientific ResearchUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-18-1-0360]; Nebraska Materials Research Science and Engineering Center [DMR 1420645]; Swedish Knut and Alice Wallenbergs Foundation; American Chemical Society/Petrol Research Fund; University of Nebraska Foundation; J. A. Woollam Foundation; JSPSMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [1080033]; Nebraska Research Initiative
520 a We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an alpha -Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73eV to 8.75eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M-0-type van Hove singularities for polarization perpendicular to the c axis, E 0 , perpendicular to = 5.46 ( 6 ) eV and E 0 , perpendicular to = 6.04 ( 1 ) eV, and one direct band-to-band transition with M-1-type van Hove singularity for polarization parallel to E 0 , | | = 5.44 ( 2 ) eV. We further identify excitonic contributions with a small binding energy of 7meV associated with the lowest ordinary transition and a hyperbolic exciton at the M-1-type critical point with a large binding energy of 178meV.
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
7001 a Korlacki, Rafalu Univ Nebraska, NE 68588 USA4 aut
7001 a Jinno, Rienau Cornell Univ, NY 14853 USA; Kyoto Univ, Japan4 aut
7001 a Cho, Yongjinu Cornell Univ, NY 14853 USA4 aut
7001 a Xing, Huili Graceu Cornell Univ, NY 14853 USA4 aut
7001 a Jena, Debdeepu Cornell Univ, NY 14853 USA4 aut
7001 a Kilic, Ufuku Univ Nebraska, NE 68588 USA4 aut
7001 a Stokey, Meganu Univ Nebraska, NE 68588 USA4 aut
7001 a Schubert, Mathiasu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska, NE 68588 USA; Leibniz Inst Polymerforsch eV, Germany4 aut0 (Swepub:liu)schma39
7102 a Univ Nebraska, NE 68588 USAb Cornell Univ, NY 14853 USA; Kyoto Univ, Japan4 org
7730 t Applied Physics Lettersd : AMER INST PHYSICSg 118:6q 118:6x 0003-6951x 1077-3118
8564 u https://aip.scitation.org/doi/10.1063/5.0031424
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-174662
8564 8u https://doi.org/10.1063/5.0031424

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