WFRF:(Kanski J.)
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Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures
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- Sadowski, J (author)
- Uppsala universitet,Institutionen för materialvetenskap,SOLID STATE PHYSICS
- Mathieu, R (author)
- Svedlindh, P (author)
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- Karlsteen, M (author)
- Kanski, J (author)
- Ilver, L (author)
- Asklund, H (author)
- Swiatek, K (author)
- Domagala, JZ (author)
- Bak-Misiuk, J (author)
- Maude, D (author)
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- (creator_code:org_t)
- ELSEVIER SCIENCE BV, 2001
- 2001
- English.
- In: PHYSICA E. - : ELSEVIER SCIENCE BV. - 1386-9477. ; 10:1-3, s. 181-185
- Journal article (peer-reviewed)
Abstract
Subject headings
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- We report on the successful growth of GaMnAs layers by means of migration enhanced epitaxy (MEE) at very low substrate temperatures (below 150 degreesC). The MEE growth proceeds under stoichiometric conditions. This should lead to a lower concentration of
Keyword
- ferromagnetic semiconductors; migration enhanced epitaxy; molecular beam epitaxy; DILUTED MAGNETIC SEMICONDUCTORS; MOLECULAR-BEAM EPITAXY; FERROMAGNETISM; (GA;MN)AS; GAAS
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- Sadowski, J
- Mathieu, R
- Svedlindh, P
- Karlsteen, M
- Kanski, J
- Ilver, L
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- Asklund, H
- Swiatek, K
- Domagala, JZ
- Bak-Misiuk, J
- Maude, D
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- PHYSICA E
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- Uppsala University
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