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Ionization energy o...
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Ivanov, Ivan GueorguievLinköpings universitet,Halvledarmaterial,Tekniska högskolan
(författare)
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
- Artikel/kapitelEngelska2010
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American Institute of Physics,2010
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electronicrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-60887
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-60887URI
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https://doi.org/10.1063/1.3487480DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Original Publication: Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén, Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission, 2010, JOURNAL OF APPLIED PHYSICS, (108), 6, 063532. http://dx.doi.org/10.1063/1.3487480 Copyright: American Institute of Physics http://www.aip.org/
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Donor-acceptor pair luminescence of P-Al and N-Al pairs in 3C-SiC is analyzed. The structures in the spectra corresponding to recombination of pairs at intermediate distances are fitted with theoretical spectra of type I (P-Al pairs) and type II (N-Al pairs). It is shown that in the regions chosen for fitting the line positions obey the equation (h) over bar omega(R)=E-G-E-D-E-A+e(2)/epsilon R, where (h) over bar omega(R) is the energy of the photon emitted by recombination of a pair at a distance R, e is the electron charge, epsilon is the static dielectric constant, and E-G, E-D, and E-A are the electronic band gap and the donor and acceptor ionization energies, respectively. The fits yield the values E-G-E-D-E-A for the N-Al (2094 meV) and P-Al (2100.1 meV) cases. Using the known value of the nitrogen ionization energy, 54.2 meV, phosphorus ionization energy of 48.1 meV is obtained. Identification of the sharp lines corresponding to recombination of close pairs in the P-Al spectrum is suggested.
Ämnesord och genrebeteckningar
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aluminium
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energy gap
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nitrogen
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phosphorus
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silicon compounds
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wide band gap semiconductors
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TECHNOLOGY
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TEKNIKVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Henry, AnneLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)annhe32
(författare)
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Yan, FeiUniversity of Pittsburgh
(författare)
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Choyke, W JUniversity of Pittsburgh
(författare)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
(författare)
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:JOURNAL OF APPLIED PHYSICS: American Institute of Physics108:6, s. 063532-0021-89791089-7550
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