Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN

Hydrogen, carbon, and oxygen are common unintentional impurities of Al(x)Ga(1−x)N crystals. This impurity structure and its interplay with Mg impurities in Al(x)Ga(1−x)N semiconductors are relevant to develop the p-type nitride crystals for various devices (e.g, LEDs, transistors, gas sensors) but are still unclear. Here we have investigated Mg-doped Al0.5Ga0.5N before and after postgrowth annealing with valence-band and core-level photoelectron spectroscopy, photoluminescence, and resistivity measurements. First, it is found that a surface part of the Al0.5Ga0.5N crystal is surprisingly inert with air and stable against air exposure-induced changes. Thus, the relatively surface-sensitive photoelectron spectroscopy measurements reflect in this case also the bulk crystal characteristics. The measurements reveal the presence of deep states up to 1 eV above valence-band maximum before and after the annealing and that oxygen and carbon occupy N lattice sites (i.e., ON and CN). The model where CN-induced acceptor states in the band gap participate in the blue emission (photoluminescence) is supported. Furthermore, the presented Mg 2p core-level spectra demonstrate that part of Mg atoms forms direct bond(s) with oxygen in the bulklike structure of Al0.5Ga0.5N and that the chemical environment of Mg atoms is much richer than was expected previously.

Tuominen, MarjukkaUniversity of Turku (författare)
Nieminen, TiinaUniversity of Turku (författare)
Yasir, MuhammadUniversity of Turku (författare)
Kuzmin, MikhailIoffe Physical-Technical Institute of the Russian Academy of Sciences,University of Turku (författare)
Dahl, JohnnyUniversity of Turku (författare)
Punkkinen, MarkoUniversity of Turku (författare)
Laukkanen, PekkaUniversity of Turku (författare)
Kokko, KaleviUniversity of Turku (författare)
Osiecki, JacekLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-joe (författare)
Schulte, KarinaLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-ksl (författare)
Lastusaari, MikaUniversity of Turku (författare)
Huhtinen, HannuUniversity of Turku (författare)
Paturi, PetriinaUniversity of Turku (författare)
University of TurkuIoffe Physical-Technical Institute of the Russian Academy of Sciences (creator_code:org_t)

Ingår i:Journal of Physical Chemistry C: American Chemical Society (ACS)120:50, s. 28591-285971932-74471932-7455

Av författaren/redakt...: Makela, Jaakko; Tuominen, Marjuk ...; Nieminen, Tiina; Yasir, Muhammad; Kuzmin, Mikhail; Dahl, Johnny; visa fler...; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Osiecki, Jacek; Schulte, Karina; Lastusaari, Mika; Huhtinen, Hannu; Paturi, Petriina; visa färre...

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