WFRF:(Mariucci L.)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02371naa a2200433 4500 | |
| 001 | oai:DiVA.org:kth-15161 | |
| 003 | SwePub | |
| 008 | 100805s2005 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-151612 URI |
| 024 | 7 | a https://doi.org/10.1063/1.21261442 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Monakhov, E. V.4 aut |
| 245 | 1 0 | a The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon |
| 264 | 1 | b AIP Publishing,c 2005 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20100525 | |
| 520 | a We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of similar to 4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA. | |
| 653 | a transient enhanced diffusion | |
| 653 | a electrical activation | |
| 653 | a dopant diffusion | |
| 653 | a redistribution | |
| 653 | a shallow | |
| 653 | a layers | |
| 700 | 1 | a Svensson, B. G.4 aut |
| 700 | 1 | a Linnarsson, Margareta K.u KTH,Mikroelektronik och tillämpad fysik, MAP4 aut0 (Swepub:kth)u1x6y4ru |
| 700 | 1 | a La Magna, A.4 aut |
| 700 | 1 | a Italia, M.4 aut |
| 700 | 1 | a Privitera, V.4 aut |
| 700 | 1 | a Fortunato, G.4 aut |
| 700 | 1 | a Cuscuna, M.4 aut |
| 700 | 1 | a Mariucci, L.4 aut |
| 710 | 2 | a KTHb Mikroelektronik och tillämpad fysik, MAP4 org |
| 773 | 0 | t Applied Physics Lettersd : AIP Publishingg 87:19q 87:19x 0003-6951x 1077-3118 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-15161 |
| 856 | 4 8 | u https://doi.org/10.1063/1.2126144 |
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