Sökning: WFRF:(Schimmel H) > Polycrystalline SiC...
Fältnamn | Indikatorer | Metadata |
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000 | 02733naa a2200469 4500 | |
001 | oai:DiVA.org:kth-127226 | |
003 | SwePub | |
008 | 130828s2013 | |||||||||||000 ||eng| | |
009 | oai:DiVA.org:liu-87901 | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1272262 URI |
024 | 7 | a https://doi.org/10.4028/www.scientific.net/MSF.740-742.392 DOI |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-879012 URI |
040 | a (SwePub)kthd (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a kon2 swepub-publicationtype |
100 | 1 | a Kaiser, M.u University of Erlangen-Nuremberg, Germany4 aut |
245 | 1 0 | a Polycrystalline SiC as source material for the growth of fluorescent SiC layers |
264 | 1 | b Trans Tech Publications Inc.c 2013 |
338 | a print2 rdacarrier | |
490 | 0 | a Materials Science Forum,x 0255-5476 ;v 740-742 |
500 | a QC 20130829 | |
520 | a Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics. | |
653 | a Silicon Carbide | |
653 | a Orientation | |
653 | a PVT | |
653 | a Polycrystalline | |
653 | a Doping | |
700 | 1 | a Hupfer, T.u University of Erlangen-Nuremberg, Germany4 aut |
700 | 1 | a Jokubavicius, Valdasu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)valjo12 |
700 | 1 | a Schimmel, S.u University of Erlangen-Nuremberg, Germany4 aut |
700 | 1 | a Syväjärvi, Mikaelu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)miksy08 |
700 | 1 | a Ou, Y.u Technical University of Denmark, Lyngby4 aut |
700 | 1 | a Ou, H.u Technical University of Denmark, Lyngby4 aut |
700 | 1 | a Linnarsson, Margareta K.u KTH,Integrerade komponenter och kretsar,KTH Royal Institute of Technology, Kista, Sweden4 aut0 (Swepub:kth)u1x6y4ru |
700 | 1 | a Wellmann, P.u University of Erlangen-Nuremberg, Germany4 aut |
710 | 2 | a University of Erlangen-Nuremberg, Germanyb Halvledarmaterial4 org |
773 | 0 | t Silicon Carbide And Related Materials 2012d : Trans Tech Publications Inc.g , s. 39-42q <39-42z 9783037856246 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127226 |
856 | 4 8 | u https://doi.org/10.4028/www.scientific.net/MSF.740-742.39 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87901 |
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