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Metal versus rare-g...
Metal versus rare-gas ion irradiation during Ti1-xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias
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- Greczynski, Grzegorz (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Lu, Jun (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Jensen, Jens (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Petrov, Ivan (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Greene, Joseph E. (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Bolz, Stephan (author)
- CemeCon AG, Germany
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- Koelker, Werner (author)
- CemeCon AG, Germany
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- Schiffers, Christoph (author)
- CemeCon AG, Germany
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- Lemmer, Oliver (author)
- CemeCon AG, Germany
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- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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(creator_code:org_t)
- American Vacuum Society, 2012
- 2012
- English.
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In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 30:6
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Abstract
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- Metastable NaCl-structure Ti1-xAlxN is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 degrees C. Three sets of experiments are carried out: a -60V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti1-xAlxN) with random orientation, due primarily to intense Ar+ irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar+ ion bombardment is greatly reduced in favor of irradiation predominantly by Al+ ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar+ to Al+ bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.
Keyword
- aluminium compounds
- compressive strength
- ion beam effects
- nanofabrication
- nanostructured materials
- nucleation
- solubility
- sputter deposition
- thin films
- titanium compounds
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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Greczynski, Grze ...
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Lu, Jun
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Jensen, Jens
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Petrov, Ivan
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Greene, Joseph E ...
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Bolz, Stephan
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show more...
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Koelker, Werner
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Schiffers, Chris ...
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Lemmer, Oliver
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Hultman, Lars
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Journal of Vacuu ...
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Linköping University