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Constructing Chromi...
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Jiang, ShengEast China Normal Univ, Peoples R China
(author)
Constructing Chromium Multioxide Hole-Selective Heterojunction for High-Performance Perovskite Solar Cells
- Article/chapterEnglish2022
Publisher, publication year, extent ...
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2022-08-28
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Wiley,2022
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-188443
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-188443URI
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https://doi.org/10.1002/advs.202203681DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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Funding Agencies|National Science Foundation of China [21875067]; Shanghai Science and Technology Innovation Action Plan [22ZR1418900]; Fundamental Research Funds for the Central Universities; Shanghai Rising-Star [19QA1403100]; East China Normal University (ECNU) Multifunctional Platform for Innovation; open research fund of Songshan Lake Materials Laboratory [2021SLABFK02]; National Key Research and Development Program of China [2017YFA0206600]; National Natural Science Foundation of China [51922032, 21961160720]
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Perovskite solar cells (PSCs) suffer from significant nonradiative recombination at perovskite/charge transport layer heterojunction, seriously limiting their power conversion efficiencies. Herein, solution-processed chromium multioxide (CrOx) is judiciously selected to construct a MAPbI(3)/CrOx/Spiro-OMeTAD hole-selective heterojunction. It is demonstrated that the inserted CrOx not only effectively reduces defect sites via redox shuttle at perovskite contact, but also decreases valence band maximum (VBM)-HOMO offset between perovskite and Spiro-OMeTAD. This will diminish thermionic losses for collecting holes and thus promote charge transport across the heterojunction, suppressing both defect-assisted recombination and interface carrier recombination. As a result, a remarkable improvement of 21.21% efficiency with excellent device stability is achieved compared to 18.46% of the control device, which is among the highest efficiencies for polycrystalline MAPbI(3) based n-i-p planar PSCs reported to date. These findings of this work provide new insights into novel charge-selective heterojunctions for further enhancing efficiency and stability of PSCs.
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Xiong, ShaobingEast China Normal Univ, Peoples R China
(author)
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Dong, WeiEast China Normal Univ, Peoples R China
(author)
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Li, DanqinEast China Normal Univ, Peoples R China
(author)
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Yan, YutingEast China Normal Univ, Peoples R China
(author)
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Jia, MenghuiEast China Normal Univ, Peoples R China
(author)
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Dai, YannanEast China Normal Univ, Peoples R China
(author)
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Zhao, QingbiaoEast China Normal Univ, Peoples R China
(author)
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Jiang, KaiEast China Normal Univ, Peoples R China
(author)
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Liu, Xianjie,1971-Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)xiali21
(author)
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Ding, LimingNatl Ctr Nanosci & Technol, Peoples R China
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Fahlman, Mats,1967-Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)matfa21
(author)
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Sun, ZhenrongEast China Normal Univ, Peoples R China
(author)
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Bao, QinyeEast China Normal Univ, Peoples R China; Shanxi Univ, Peoples R China
(author)
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East China Normal Univ, Peoples R ChinaLaboratoriet för organisk elektronik
(creator_code:org_t)
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In:Advanced Science: Wiley9:302198-3844
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Jiang, Sheng
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Xiong, Shaobing
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Dong, Wei
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Li, Danqin
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Yan, Yuting
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Jia, Menghui
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Dai, Yannan
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Zhao, Qingbiao
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Jiang, Kai
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Liu, Xianjie, 19 ...
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Ding, Liming
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Fahlman, Mats, 1 ...
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Sun, Zhenrong
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Bao, Qinye
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Advanced Science
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Linköping University