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Search: L773:2198 3844 OR L773:2198 3844 > (2022) > Constructing Chromi...

  • Jiang, ShengEast China Normal Univ, Peoples R China (author)

Constructing Chromium Multioxide Hole-Selective Heterojunction for High-Performance Perovskite Solar Cells

  • Article/chapterEnglish2022

Publisher, publication year, extent ...

  • 2022-08-28
  • Wiley,2022
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-188443
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-188443URI
  • https://doi.org/10.1002/advs.202203681DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding Agencies|National Science Foundation of China [21875067]; Shanghai Science and Technology Innovation Action Plan [22ZR1418900]; Fundamental Research Funds for the Central Universities; Shanghai Rising-Star [19QA1403100]; East China Normal University (ECNU) Multifunctional Platform for Innovation; open research fund of Songshan Lake Materials Laboratory [2021SLABFK02]; National Key Research and Development Program of China [2017YFA0206600]; National Natural Science Foundation of China [51922032, 21961160720]
  • Perovskite solar cells (PSCs) suffer from significant nonradiative recombination at perovskite/charge transport layer heterojunction, seriously limiting their power conversion efficiencies. Herein, solution-processed chromium multioxide (CrOx) is judiciously selected to construct a MAPbI(3)/CrOx/Spiro-OMeTAD hole-selective heterojunction. It is demonstrated that the inserted CrOx not only effectively reduces defect sites via redox shuttle at perovskite contact, but also decreases valence band maximum (VBM)-HOMO offset between perovskite and Spiro-OMeTAD. This will diminish thermionic losses for collecting holes and thus promote charge transport across the heterojunction, suppressing both defect-assisted recombination and interface carrier recombination. As a result, a remarkable improvement of 21.21% efficiency with excellent device stability is achieved compared to 18.46% of the control device, which is among the highest efficiencies for polycrystalline MAPbI(3) based n-i-p planar PSCs reported to date. These findings of this work provide new insights into novel charge-selective heterojunctions for further enhancing efficiency and stability of PSCs.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Xiong, ShaobingEast China Normal Univ, Peoples R China (author)
  • Dong, WeiEast China Normal Univ, Peoples R China (author)
  • Li, DanqinEast China Normal Univ, Peoples R China (author)
  • Yan, YutingEast China Normal Univ, Peoples R China (author)
  • Jia, MenghuiEast China Normal Univ, Peoples R China (author)
  • Dai, YannanEast China Normal Univ, Peoples R China (author)
  • Zhao, QingbiaoEast China Normal Univ, Peoples R China (author)
  • Jiang, KaiEast China Normal Univ, Peoples R China (author)
  • Liu, Xianjie,1971-Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)xiali21 (author)
  • Ding, LimingNatl Ctr Nanosci & Technol, Peoples R China (author)
  • Fahlman, Mats,1967-Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)matfa21 (author)
  • Sun, ZhenrongEast China Normal Univ, Peoples R China (author)
  • Bao, QinyeEast China Normal Univ, Peoples R China; Shanxi Univ, Peoples R China (author)
  • East China Normal Univ, Peoples R ChinaLaboratoriet för organisk elektronik (creator_code:org_t)

Related titles

  • In:Advanced Science: Wiley9:302198-3844

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