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Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys

Duda, LC (author)
Uppsala universitet
Stagarescu, CB (author)
Uppsala universitet
Downes, J (author)
Uppsala universitet
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Smith, KE (author)
Uppsala universitet
Korakakis, D (author)
Uppsala universitet
Moustakas, TD (author)
Uppsala universitet
Guo, JH (author)
Uppsala universitet
Nordgren, J (author)
Uppsala universitet
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 (creator_code:org_t)
AMERICAN PHYSICAL SOC, 1998
1998
English.
In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 58:4, s. 1928-1933
  • Journal article (other academic/artistic)
Abstract Subject headings
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  • The electronic structure of the wurtzite AlxGa1-xN alloy system has been studied for numerous values of Al concentration x ranging from 0 (pure GaN) to 1 (pun AlN). The occupied and unoccupied partial density of states was measured for each alloy using sy

Keyword

RAY PHOTOEMISSION SPECTROSCOPY; ELECTRONIC-STRUCTURE; FILMS; DISCONTINUITY; EMISSION

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art (subject category)

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